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New! power electronics by p.s 16: A comprehensive guide to rectifiers, inverters, and power semicond



Offering both conventional linear topology and patented Active Resistance Technology, Magna-Power defines a new cost-point for high-power electronic loads from 1.25 kW to 20 kW+, offering unique control modes and highly reliable continuous full-power operation up to 50C.




New! power electronics by p.s 16



Magna-Power is dedicated to providing best-in-class support for high-power programmable DC power supplies and electronic loads applications. With sales offices in the United Kingdom and China, partners in over 45 countries, and a network of 40 North American representatives, since 1981 Magna-Power has continuously expanded its world-class network of sales, service, and integration channels alongside growth of its product line.


The Rolls PS16 Personal Monitor Power Center supplies the DC power and distributes the Monitor signal to up to ten PM50s, PM50sOB, or PM350 units. This dramatically increases efficiency and eliminates the need for multiple wall-warts and adapter cables.


Both the power and monitor signals are carried from each PS16 output to the Monitor input of the PM50s, sOB, and 350 using an ordinary 1/4" stereo TRS cable . By using stereo "Y" adapters, up to ten of the Personal Monitor Amplifiers may be daisy-chained.


USB port can be used to transfer data, act as an interface for peripherals and even act as power supply for devices connected to it. There are three kinds of USB ports: Type A, Type B or mini USB and Micro USB.


The first high-power electronic devices were made using mercury-arc valves. In modern systems, the conversion is performed with semiconductor switching devices such as diodes, thyristors, and power transistors such as the power MOSFET and IGBT. In contrast to electronic systems concerned with the transmission and processing of signals and data, substantial amounts of electrical energy are processed in power electronics. An AC/DC converter (rectifier) is the most typical power electronics device found in many consumer electronic devices, e.g. television sets, personal computers, battery chargers, etc. The power range is typically from tens of watts to several hundred watts. In industry, a common application is the variable speed drive (VSD) that is used to control an induction motor. The power range of VSDs starts from a few hundred watts and ends at tens of megawatts.


Power electronics started with the development of the mercury arc rectifier. Invented by Peter Cooper Hewitt in 1902, it was used to convert alternating current (AC) into direct current (DC). From the 1920s on, research continued on applying thyratrons and grid-controlled mercury arc valves to power transmission. Uno Lamm developed a mercury valve with grading electrodes making them suitable for high voltage direct current power transmission. In 1933 selenium rectifiers were invented.[1]


Julius Edgar Lilienfeld proposed the concept of a field-effect transistor in 1926, but it was not possible to actually construct a working device at that time.[2] In 1947, the bipolar point-contact transistor was invented by Walter H. Brattain and John Bardeen under the direction of William Shockley at Bell Labs. In 1948 Shockley's invention of the bipolar junction transistor (BJT) improved the stability and performance of transistors, and reduced costs. By the 1950s, higher power semiconductor diodes became available and started replacing vacuum tubes. In 1956 the silicon controlled rectifier (SCR) was introduced by General Electric, greatly increasing the range of power electronics applications.[3] By the 1960s, the improved switching speed of bipolar junction transistors had allowed for high frequency DC/DC converters.


R. D. Middlebrook made important contributions to power electronics. In 1970, he founded the Power Electronics Group at Caltech.[4] He developed the state-space averaging method of analysis and other tools crucial to modern power electronics design.[5]


In 1969, Hitachi introduced the first vertical power MOSFET,[7] which would later be known as the VMOS (V-groove MOSFET).[8] From 1974, Yamaha, JVC, Pioneer Corporation, Sony and Toshiba began manufacturing audio amplifiers with power MOSFETs.[9] International Rectifier introduced a 25 A, 400 V power MOSFET in 1978.[10] This device allows operation at higher frequencies than a bipolar transistor, but is limited to low voltage applications.


The power MOSFET is the most common power device in the world, due to its low gate drive power, fast switching speed,[11] easy advanced paralleling capability,[11][12] wide bandwidth, ruggedness, easy drive, simple biasing, ease of application, and ease of repair.[12] It has a wide range of power electronic applications, such as portable information appliances, power integrated circuits, cell phones, notebook computers, and the communications infrastructure that enables the Internet.[13]


In 1982, the insulated-gate bipolar transistor (IGBT) was introduced. It became widely available in the 1990s. This component has the power handling capability of the bipolar transistor and the advantages of the isolated gate drive of the power MOSFET.


The capabilities and economy of power electronics system are determined by the active devices that are available. Their characteristics and limitations are a key element in the design of power electronics systems. Formerly, the mercury arc valve, the high-vacuum and gas-filled diode thermionic rectifiers, and triggered devices such as the thyratron and ignitron were widely used in power electronics. As the ratings of solid-state devices improved in both voltage and current-handling capacity, vacuum devices have been nearly entirely replaced by solid-state devices.


Power electronic devices may be used as switches, or as amplifiers.[14] An ideal switch is either open or closed and so dissipates no power; it withstands an applied voltage and passes no current or passes any amount of current with no voltage drop. Semiconductor devices used as switches can approximate this ideal property and so most power electronic applications rely on switching devices on and off, which makes systems very efficient as very little power is wasted in the switch. By contrast, in the case of the amplifier, the current through the device varies continuously according to a controlled input. The voltage and current at the device terminals follow a load line, and the power dissipation inside the device is large compared with the power delivered to the load.


Devices vary in switching speed. Some diodes and thyristors are suited for relatively slow speed and are useful for power frequency switching and control; certain thyristors are useful at a few kilohertz. Devices such as MOSFETS and BJTs can switch at tens of kilohertz up to a few megahertz in power applications, but with decreasing power levels. Vacuum tube devices dominate high power (hundreds of kilowatts) at very high frequency (hundreds or thousands of megahertz) applications. Faster switching devices minimize energy lost in the transitions from on to off and back but may create problems with radiated electromagnetic interference. Gate drive (or equivalent) circuits must be designed to supply sufficient drive current to achieve the full switching speed possible with a device. A device without sufficient drive to switch rapidly may be destroyed by excess heating.


Practical devices have a non-zero voltage drop and dissipate power when on, and take some time to pass through an active region until they reach the "on" or "off" state. These losses are a significant part of the total lost power in a converter.


Power handling and dissipation of devices is also critical factor in design. Power electronic devices may have to dissipate tens or hundreds of watts of waste heat, even switching as efficiently as possible between conducting and non-conducting states. In the switching mode, the power controlled is much larger than the power dissipated in the switch. The forward voltage drop in the conducting state translates into heat that must be dissipated. High power semiconductors require specialized heat sinks or active cooling systems to manage their junction temperature; exotic semiconductors such as silicon carbide have an advantage over straight silicon in this respect, and germanium, once the main-stay of solid-state electronics is now little used due to its unfavorable high-temperature properties.


DC to AC converters produce an AC output waveform from a DC source. Applications include adjustable speed drives (ASD), uninterruptible power supplies (UPS), Flexible AC transmission systems (FACTS), voltage compensators, and photovoltaic inverters. Topologies for these converters can be separated into two distinct categories: voltage source inverters and current source inverters. Voltage source inverters (VSIs) are named so because the independently controlled output is a voltage waveform. Similarly, current source inverters (CSIs) are distinct in that the controlled AC output is a current waveform.


DC to AC power conversion is the result of power switching devices, which are commonly fully controllable semiconductor power switches. The output waveforms are therefore made up of discrete values, producing fast transitions rather than smooth ones. For some applications, even a rough approximation of the sinusoidal waveform of AC power is adequate. Where a near sinusoidal waveform is required, the switching devices are operated much faster than the desired output frequency, and the time they spend in either state is controlled so the averaged output is nearly sinusoidal. Common modulation techniques include the carrier-based technique, or Pulse-width modulation, space-vector technique, and the selective-harmonic technique.[15]


Voltage source inverters have practical uses in both single-phase and three-phase applications. Single-phase VSIs utilize half-bridge and full-bridge configurations, and are widely used for power supplies, single-phase UPSs, and elaborate high-power topologies when used in multicell configurations. Three-phase VSIs are used in applications that require sinusoidal voltage waveforms, such as ASDs, UPSs, and some types of FACTS devices such as the STATCOM. They are also used in applications where arbitrary voltages are required, as in the case of active power filters and voltage compensators.[15] 2ff7e9595c


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